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| PartNumber | TK5Q60W,S1VQ | TK5Q60W | TK5Q60W,S1VQ(S |
| Description | MOSFET DTMOSIV 600V 900mOhm 5.4A 60W 380pF10.5nC | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-251-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 5.4 A | - | - |
| Rds On Drain Source Resistance | 770 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.7 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 10.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 60 W | - | - |
| Configuration | Single | - | - |
| Tradename | DTMOSIV | - | - |
| Height | 6.1 mm | - | - |
| Length | 6.65 mm | - | - |
| Series | TK5Q60W | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 2.3 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 7 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 18 ns | - | - |
| Factory Pack Quantity | 75 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 50 ns | - | - |
| Typical Turn On Delay Time | 40 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Toshiba |
TK5Q60W,S1VQ | MOSFET DTMOSIV 600V 900mOhm 5.4A 60W 380pF10.5nC | |
| TK5Q60W,S1VQ | Darlington Transistors MOSFET DTMOSIV 600V 900mOhm 5.4A 60W 380pF10.5nC | ||
| TK5Q60W | Жаңа және түпнұсқа | ||
| TK5Q60W,S1VQ(S | Жаңа және түпнұсқа | ||
| TK5Q60WS1VQ | Trans MOSFET N 600V 5.4A 3-Pin IPAK Tube - Rail/Tube (Alt: TK5Q60W,S1VQ) | ||
| TK5Q60WS1VQ(S | Жаңа және түпнұсқа | ||
| TK5Q60WS1VQ-ND | Жаңа және түпнұсқа |