TK4R4

TK4R4P06PL,RQ vs TK4R4P06PLRQ vs TK4R4P06PLRQCT-ND

 
PartNumberTK4R4P06PL,RQTK4R4P06PLRQTK4R4P06PLRQCT-ND
DescriptionMOSFET N-Ch 60V 3280pF 48.2nC 106A 87W
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current106 A--
Rds On Drain Source Resistance3.4 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge48.2 nC--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation87 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
SeriesTK4R4P06PL--
Transistor Type1 N-Channel--
BrandToshiba--
Fall Time18 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time55 ns--
Typical Turn On Delay Time24 ns--
Unit Weight0.007055 oz--
Өндіруші Бөлім № Сипаттама RFQ
Toshiba
Toshiba
TK4R4P06PL,RQ MOSFET N-Ch 60V 3280pF 48.2nC 106A 87W
TK4R4P06PLRQ Жаңа және түпнұсқа
TK4R4P06PLRQCT-ND Жаңа және түпнұсқа
TK4R4P06PLRQDKR-ND Жаңа және түпнұсқа
TK4R4P06PLRQTR-ND Жаңа және түпнұсқа
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