TH430

TH430 vs TH430-10 vs TH430B

 
PartNumberTH430TH430-10TH430B
DescriptionRF Bipolar Transistors RF Transistor
ManufacturerAdvanced Semiconductor, Inc.--
Product CategoryRF Bipolar Transistors--
RoHSY--
Transistor TypeBipolar Power--
TechnologySi--
Transistor PolarityNPN--
DC Collector/Base Gain hfe Min15--
Collector Emitter Voltage VCEO Max55 V--
Emitter Base Voltage VEBO4 V--
Continuous Collector Current40 A--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 200 C--
Mounting StyleScrew Mount--
Package / CaseM177--
PackagingTray--
Operating Frequency30 MHz--
TypeRF Bipolar Power--
BrandAdvanced Semiconductor, Inc.--
Pd Power Dissipation330 W--
Product TypeRF Bipolar Transistors--
SubcategoryTransistors--
Өндіруші Бөлім № Сипаттама RFQ
Advanced Semiconductor, Inc.
Advanced Semiconductor, Inc.
TH430 RF Bipolar Transistors RF Transistor
TH430 RF Bipolar Transistors RF Transisto
TH430-10 Жаңа және түпнұсқа
TH430B Жаңа және түпнұсқа
TH430C Жаңа және түпнұсқа
TH430D Жаңа және түпнұсқа
TH430E Жаңа және түпнұсқа
TH430F Жаңа және түпнұсқа
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