TEST2

TEST2600 vs TEST2 vs TEST20100704-1209PM

 
PartNumberTEST2600TEST2TEST20100704-1209PM
DescriptionPhototransistors 70V 100mW 920nm
ManufacturerVishayVishay Semiconductor Opto Division-
Product CategoryPhototransistorsOptical Sensors - Photodiodes-
RoHSY--
ProductPhototransistorsPhototransistors-
Package / CaseSide View Micro--
Mounting StyleThrough HoleThrough Hole-
Peak Wavelength920 nm--
Maximum On State Collector Current50 mA50 mA-
Collector Emitter Voltage VCEO Max70 V--
Collector Emitter Breakdown Voltage70 V70 V-
Collector Emitter Saturation Voltage0.3 V0.3 V-
Dark Current100 nA100 nA-
Pd Power Dissipation100 mW--
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 85 C+ 85 C-
Height3.1 mm--
Length3.6 mm--
Lens Color/StyleBlack--
PackagingBulkBulk-
TypeIR ChipIR Chip-
Wavelength920 nm950nm-
Width2.2 mm--
BrandVishay Semiconductors--
Half Intensity Angle Degrees30 deg--
Light Current2.5 mA2.5 mA-
Product TypePhototransistors--
Factory Pack Quantity5000--
SubcategoryOptical Detectors and Sensors--
Series-*-
Package Case-Side View Micro-
Operating Temperature--40°C ~ 85°C (TA)-
Mounting Type-Through Hole-
Power Max-100mW-
Current Collector Ic Max-50mA-
Voltage Collector Emitter Breakdown Max-70V-
Orientation-Universal-
Current Dark Id Max-100nA-
Viewing Angle-120°-
Pd Power Dissipation-100 mW-
Collector Emitter Voltage VCEO Max-70 V-
Өндіруші Бөлім № Сипаттама RFQ
Vishay Semiconductors
Vishay Semiconductors
TEST2600 Phototransistors 70V 100mW 920nm
TEST2600 Optical Sensors Phototransistors 70V 100mW 920nm
TEST2 Жаңа және түпнұсқа
TEST2602 Жаңа және түпнұсқа
TEST2H2S04 Жаңа және түпнұсқа
TEST20100704-1209PM Жаңа және түпнұсқа
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