SUP80

SUP80090E-GE3 vs SUP80N06-10 vs SUP80N10

 
PartNumberSUP80090E-GE3SUP80N06-10SUP80N10
DescriptionMOSFET 150V Vds 20V Vgs TO-220
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage150 V--
Id Continuous Drain Current128 A--
Rds On Drain Source Resistance7.8 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge95 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation375 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameThunderFET--
PackagingTube--
SeriesSUP--
Transistor Type1 N-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min52 S--
Fall Time8 ns--
Product TypeMOSFET--
Rise Time114 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time28 ns--
Typical Turn On Delay Time15 ns--
Unit Weight0.063493 oz--
Өндіруші Бөлім № Сипаттама RFQ
Vishay / Siliconix
Vishay / Siliconix
SUP80090E-GE3 MOSFET 150V Vds 20V Vgs TO-220
Vishay
Vishay
SUP80090E-GE3 MOSFET N-CH 150V 128A TO220AB
SUP80N06-10 Жаңа және түпнұсқа
SUP80N10 Жаңа және түпнұсқа
SUP80N15-20L Жаңа және түпнұсқа
SUP80N15-20L-E3 Жаңа және түпнұсқа
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