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| PartNumber | STQ1NK80ZR-AP | STQ1NK60ZR-AP |
| Description | MOSFET N Ch 800V 13 Ohm 1A | MOSFET N-channel 600 V, 13 Ohm typ., 0.3 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-92-3 | TO-92-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | 600 V |
| Id Continuous Drain Current | 300 mA | 300 mA |
| Rds On Drain Source Resistance | 16 Ohms | 15 Ohms |
| Vgs Gate Source Voltage | 30 V | 10 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 3 W | 3 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Ammo Pack | - |
| Height | 4.95 mm | - |
| Length | 4.95 mm | - |
| Series | STQ1NK80ZR-AP | STQ1NK60ZR |
| Transistor Type | 1 N-Channel | 1 N-Channel Power MOSFET |
| Width | 3.94 mm | - |
| Brand | STMicroelectronics | STMicroelectronics |
| Fall Time | 55 ns | 28 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 30 ns | 5 ns |
| Factory Pack Quantity | 2000 | 2000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 22 ns | 13 ns |
| Typical Turn On Delay Time | 8 ns | 5.5 ns |
| Unit Weight | 0.007760 oz | 0.007760 oz |
| Vgs th Gate Source Threshold Voltage | - | 3 V |
| Qg Gate Charge | - | 4.9 nC |
| Tradename | - | SuperMESH |
| Forward Transconductance Min | - | 0.5 S |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
STMicroelectronics |
STQ1NK80ZR-AP | MOSFET N Ch 800V 13 Ohm 1A | |
| STQ1NK60ZR-AP | MOSFET N-channel 600 V, 13 Ohm typ., 0.3 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package | ||
| STQ1NK60ZR-AP | MOSFET N-CH 600V 0.3A TO-92 | ||
| STQ1NK80ZR-AP | MOSFET N-CH 800V 0.3A TO-92 | ||
| STQ1NE10L/APS | Жаңа және түпнұсқа | ||
| STQ1NK60 | Жаңа және түпнұсқа | ||
| STQ1NK60Z | Жаңа және түпнұсқа | ||
| STQ1NK60ZR | Жаңа және түпнұсқа | ||
| STQ1NK60ZR-APF1 | Жаңа және түпнұсқа | ||
| STQ1NK80ZR | Жаңа және түпнұсқа | ||
| STQ1NE10LAP | Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | ||
| STQ1NK60ZR-AP , MMBZ5251 | Жаңа және түпнұсқа | ||
| STQ1NK60ZR-AP,STQ1NK60ZR | Жаңа және түпнұсқа | ||
| STQ1NK60ZR-APV3 | Жаңа және түпнұсқа | ||
| STQ1NK60ZRAP | Power Field-Effect Transistor, 0.3A I(D), 600V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | ||
| STQ1NK620ZR-AP | Жаңа және түпнұсқа | ||
| STQ1NK80Z | Жаңа және түпнұсқа | ||
| STQ1NR60ZR-AP | Жаңа және түпнұсқа |