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| PartNumber | STL105N4LF7AG | STL105DN4LF7AG | STL105NS3LLH |
| Description | MOSFET Automotive-grade N-channel 40 V, 8 mOhm typ.,15 A STripFET F7 Power MOSFET in PowerFLAT 5x6 package | MOSFET Automotive-grade N-channel 40 V, 8 mOhm typ.,15 A STripFET F7 Power MOSFET in PowerFLAT 5x6 double island package | |
| Manufacturer | STMicroelectronics | STMicroelectronics | ST |
| Product Category | MOSFET | MOSFET | FETs - Single |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerFLAT5x6-4 | PowerFLAT5x6-4 | - |
| Number of Channels | 1 Channel | 2 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 105 A | 40 A | - |
| Rds On Drain Source Resistance | 4.5 mOhms | 4.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 23.3 nC | 27.5 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 150 C |
| Pd Power Dissipation | 94 W | 94 W | - |
| Configuration | Single | Dual | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Series | STL105N4LF7AG | STL105DN4LF7AG | N-channel STripFET |
| Transistor Type | 1 N-Channel | 2 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Fall Time | 15 ns | 15 ns | 12.5 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 6.5 ns | 8.5 ns | 10.4 ns |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 43 ns | 48.5 ns | 31.8 ns |
| Typical Turn On Delay Time | 10 ns | 11 ns | 26.4 ns |
| Packaging | - | - | Reel |
| Package Case | - | - | PowerFlat-8 |
| Technology | - | - | Si |
| Pd Power Dissipation | - | - | 62.5 W |
| Vgs Gate Source Voltage | - | - | +/- 20 V |
| Id Continuous Drain Current | - | - | 27 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1.2 V |
| Rds On Drain Source Resistance | - | - | 3.9 mOhms |
| Qg Gate Charge | - | - | 13.7 nC |