STGW35NB

STGW35NB60SD vs STGW35NB60SD GW35NB60SD vs STGW35NB60S

 
PartNumberSTGW35NB60SDSTGW35NB60SD GW35NB60SDSTGW35NB60S
DescriptionIGBT Transistors N Ch 35A 600VIGBT 600V 70A 200W TO247
ManufacturerSTMicroelectronics-STMicroelectronics
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Maximum Gate Emitter Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesSTGW35NB60SD-PowerMESH
PackagingTube-Tube
Continuous Collector Current Ic Max70 A--
Height20.15 mm--
Length15.75 mm--
Width5.15 mm--
BrandSTMicroelectronics--
Product TypeIGBT Transistors--
Factory Pack Quantity600--
SubcategoryIGBTs--
TradenamePowerMESH--
Unit Weight1.340411 oz--
Package Case--TO-247-3
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--TO-247-3
Power Max--200W
Reverse Recovery Time trr---
Current Collector Ic Max--70A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--250A
Vce on Max Vge Ic--1.7V @ 15V, 20A
Switching Energy--840μJ (on), 7.4mJ (off)
Gate Charge--83nC
Td on off 25°C--92ns/1.1μs
Test Condition--480V, 20A, 100 Ohm, 15V
Өндіруші Бөлім № Сипаттама RFQ
STMicroelectronics
STMicroelectronics
STGW35NB60SD IGBT Transistors N Ch 35A 600V
STGW35NB60SD IGBT Transistors N Ch 35A 600V
STGW35NB60S IGBT 600V 70A 200W TO247
STGW35NB60SD GW35NB60SD Жаңа және түпнұсқа
Top