 | | | |
| PartNumber | STGB14NC60K | STGB14NC60KD | STGB14NC60KD GB14NC60KD |
| Description | |||
| Manufacturer | STMicroelectronics | - | - |
| Product Category | IGBTs - Single | - | - |
| Series | PowerMESH | - | - |
| Packaging | Digi-ReelR Alternate Packaging | - | - |
| Unit Weight | 0.079014 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | - | - |
| Input Type | Standard | - | - |
| Mounting Type | Surface Mount | - | - |
| Supplier Device Package | D2PAK | - | - |
| Configuration | Single | - | - |
| Power Max | 80W | - | - |
| Reverse Recovery Time trr | 37ns | - | - |
| Current Collector Ic Max | 25A | - | - |
| Voltage Collector Emitter Breakdown Max | 600V | - | - |
| IGBT Type | - | - | - |
| Current Collector Pulsed Icm | 50A | - | - |
| Vce on Max Vge Ic | 2.5V @ 15V, 7A | - | - |
| Switching Energy | 82μJ (on), 155μJ (off) | - | - |
| Gate Charge | 34.4nC | - | - |
| Td on off 25°C | 22.5ns/116ns | - | - |
| Test Condition | 390V, 7A, 10 Ohm, 15V | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 2.1 V | - | - |
| Gate Emitter Leakage Current | 2 A | - | - |
| Maximum Gate Emitter Voltage | +/- 20 V | - | - |
| Continuous Collector Current Ic Max | 25 A | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
STMicroelectronics |
STGB14NC60KDT4 | IGBT Transistors PowerMESH" IGBT | |
| STGB14NC60KDT4 | IGBT Transistors PowerMESH" IGBT | ||
| STGB14NC60KT4 | IGBT 600V 25A 80W D2PAK | ||
| STGB14NC60KDT4-CUT TAPE | Жаңа және түпнұсқа | ||
| STGB14NC60K | Жаңа және түпнұсқа | ||
| STGB14NC60KD | Жаңа және түпнұсқа | ||
| STGB14NC60KD GB14NC60KD | Жаңа және түпнұсқа |