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| PartNumber | STGB10H60DF | STGB10M65DF2 | STGB10NB37LZ |
| Description | IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 10 A high speed | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 10 A low loss | IGBT Transistors 10 A 410V INTERNALLY CLAMPED IGBT |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | D2PAK | - | D2PAK-3 |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 600 V | - | 1.8 V |
| Collector Emitter Saturation Voltage | 1.5 V | - | 1.2 V |
| Maximum Gate Emitter Voltage | 20 V | - | 16 V |
| Continuous Collector Current at 25 C | 20 A | - | 20 A |
| Pd Power Dissipation | 115 W | - | 125 W |
| Minimum Operating Temperature | - 55 C | - | - 65 C |
| Maximum Operating Temperature | + 175 C | - | + 150 C |
| Series | STGB10H60DF | STGB10M65DF2 | STGB10NB37LZ |
| Packaging | Reel | Reel | Tube |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Gate Emitter Leakage Current | 250 nA | - | 700 uA |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 1000 | 1000 | 50 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 0.070548 oz | - | 0.079014 oz |
| Continuous Collector Current Ic Max | - | - | 20 A |
| Height | - | - | 4.6 mm |
| Length | - | - | 10.4 mm |
| Width | - | - | 9.35 mm |
| Continuous Collector Current | - | - | 20 A |