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| PartNumber | STFI26N60M2 | STFI26NM60N | STFI260N6F6 |
| Description | MOSFET N-channel 600 V, 0.14 Ohm typ., 20 A MDmesh M2 Power MOSFET in a I2PAKFP package | MOSFET N-Ch 600V 0.135 Ohm 20A MDmesh II | IGBT Transistors MOSFET N-channel 60 V 00024 ASTripFET Pwr MOSFET |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-281-3 | TO-281-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 600 V | - |
| Id Continuous Drain Current | 20 A | 20 A | - |
| Rds On Drain Source Resistance | 165 mOhms | 165 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Qg Gate Charge | - | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 175 C |
| Pd Power Dissipation | 30 W | 30 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | - |
| Series | STFI26N60M2 | STFI26NM60N | N-channel STripFET |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Fall Time | - | - | 62.6 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | - | - | 165 ns |
| Factory Pack Quantity | 1500 | 1500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | - | - | 144.4 ns |
| Typical Turn On Delay Time | - | - | 31.4 ns |
| Unit Weight | 0.079014 oz | 0.079014 oz | - |
| Packaging | - | Tube | Tube |
| Package Case | - | - | I2PAKFP-3 |
| Pd Power Dissipation | - | - | 41.7 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 80 A |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4 V |
| Rds On Drain Source Resistance | - | - | 3 mOhms |
| Qg Gate Charge | - | - | 183 nC |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
STMicroelectronics |
STFI26N60M2 | MOSFET N-channel 600 V, 0.14 Ohm typ., 20 A MDmesh M2 Power MOSFET in a I2PAKFP package | |
| STFI26NM60N | MOSFET N-Ch 600V 0.135 Ohm 20A MDmesh II | ||
| STFI260N6F6 | IGBT Transistors MOSFET N-channel 60 V 00024 ASTripFET Pwr MOSFET | ||
| STFI26N60M2 | MOSFET N-CH 600V 20A I2PAKFP | ||
| STFI26NM60N | MOSFET N-CH 600V 20A I2PAK FP |