STF9NK6

STF9NK60ZD vs STF9NK60Z vs STF9NK60ZD,F9NK60ZD

 
PartNumberSTF9NK60ZDSTF9NK60ZSTF9NK60ZD,F9NK60ZD
DescriptionMOSFET N-Ch 600 Volt 7 Amp
ManufacturerSTMicroelectronicsST/-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiMOSFET (Metal Oxide)-
Mounting StyleThrough Hole--
Package / CaseTO-220-3TO-220-3 Full Pack-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current7 A--
Rds On Drain Source Resistance950 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation125 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTubeTube-
Height9.3 mm--
Length10.4 mm--
SeriesSTF9NK60ZDSuperFREDmesh-
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.6 mm--
BrandSTMicroelectronics--
Forward Transconductance Min5.3 S--
Fall Time15 ns--
Product TypeMOSFET--
Rise Time13.6 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23.1 ns--
Typical Turn On Delay Time11.4 ns--
Unit Weight0.011640 oz--
Part Status-Obsolete-
FET Type-N-Channel-
Drain to Source Voltage (Vdss)-600V-
Current Continuous Drain (Id) @ 25°C-7A (Tc)-
Drive Voltage (Max Rds On, Min Rds On)-10V-
Vgs(th) (Max) @ Id-4.5V @ 100A-
Gate Charge (Qg) (Max) @ Vgs-53nC @ 10V-
Vgs (Max)-±30V-
Input Capacitance (Ciss) (Max) @ Vds-1110pF @ 25V-
FET Feature---
Power Dissipation (Max)-30W (Tc)-
Rds On (Max) @ Id, Vgs-950 mOhm @ 3.5A, 10V-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Through Hole-
Supplier Device Package-TO-220FP-
Өндіруші Бөлім № Сипаттама RFQ
STMicroelectronics
STMicroelectronics
STF9NK60ZD MOSFET N-Ch 600 Volt 7 Amp
STF9NK60ZD MOSFET N-CH 600V 7A TO220FP
STF9NK60Z Жаңа және түпнұсқа
STF9NK60ZD,F9NK60ZD Жаңа және түпнұсқа
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