STD3N6

STD3N62K3 vs STD3N65M6

 
PartNumberSTD3N62K3STD3N65M6
DescriptionMOSFET N-channel 620V, 2.7A SuperMESH MosfetMOSFET
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySi-
Mounting StyleSMD/SMT-
Package / CaseTO-252-3-
Number of Channels1 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage620 V-
Id Continuous Drain Current2.7 A-
Rds On Drain Source Resistance2.5 Ohms-
Vgs Gate Source Voltage30 V-
Qg Gate Charge13 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation45 W-
ConfigurationSingle-
Channel ModeEnhancement-
TradenameMDmesh-
PackagingReel-
Height2.4 mm-
Length6.6 mm-
SeriesSTD3N62K3STD3N65M6
Transistor Type1 N-Channel-
Width6.2 mm-
BrandSTMicroelectronicsSTMicroelectronics
Fall Time15.6 ns-
Product TypeMOSFETMOSFET
Rise Time6.8 ns-
Factory Pack Quantity25002500
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time22 ns-
Typical Turn On Delay Time9 ns-
Unit Weight0.139332 oz-
Өндіруші Бөлім № Сипаттама RFQ
STMicroelectronics
STMicroelectronics
STD3N62K3 MOSFET N-channel 620V, 2.7A SuperMESH Mosfet
STD3N65M6 MOSFET
STD3N62K3 MOSFET N-CH 620V 2.7A DPAK
STD3N65M6 MOSFET N-CH 650V DPAK
STD3N60 Жаңа және түпнұсқа
STD3N62K3-1 Жаңа және түпнұсқа
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