PartNumber | STD120N4F6 | STD120N4LF6 |
Description | MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE | MOSFET N-Ch 40V 3.1 mOhm 80A STripFET VI Deep |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 40 V | 40 V |
Id Continuous Drain Current | 80 A | 80 A |
Rds On Drain Source Resistance | 4 mOhms | 3.6 mOhms |
Vgs th Gate Source Threshold Voltage | 4 V | 3 V |
Vgs Gate Source Voltage | 20 V | 20 V |
Qg Gate Charge | 65 nC | 80 nC |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C |
Pd Power Dissipation | 110 W | 110 W |
Configuration | Single | Single |
Qualification | AEC-Q101 | AEC-Q101 |
Tradename | STripFET | STripFET |
Packaging | Reel | Reel |
Series | STD120N4F6 | STD120N4LF6 |
Transistor Type | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics |
Product Type | MOSFET | MOSFET |
Factory Pack Quantity | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs |
Unit Weight | 0.139332 oz | 0.139332 oz |