 |  |  | |
| PartNumber | STB13NM60N | STB13NM50N-1 | STB13NM50N |
| Description | MOSFET POWER MOSFET N-CH | MOSFET N Ch 600V 6A Hyper fast IGBT | MOSFET N-CH 500V 12A D2PAK |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | Through Hole | - |
| Package / Case | TO-263-3 | TO-262-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | 500 V | - |
| Id Continuous Drain Current | 11 A | 12 A | - |
| Rds On Drain Source Resistance | 360 mOhms | 320 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 25 V | 25 V | - |
| Qg Gate Charge | 27 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 90 W | 100 W | - |
| Configuration | Single | Single | - |
| Tradename | MDmesh | - | - |
| Packaging | Reel | - | - |
| Series | STB13NM60N | STB13N | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Fall Time | 10 ns | 10 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 8 ns | 15 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 30 ns | 40 ns | - |
| Typical Turn On Delay Time | 3 ns | 30 ns | - |
| Unit Weight | 0.139332 oz | 0.050717 oz | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 8.95 mm | - |
| Length | - | 10 mm | - |
| Width | - | 4.4 mm | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
STMicroelectronics |
STB13NM60N | MOSFET POWER MOSFET N-CH | |
| STB13NM50N-1 | MOSFET N Ch 600V 6A Hyper fast IGBT | ||
| STB13NM60N | MOSFET N-CH 600V 11A D2PAK | ||
| STB13NM50N | MOSFET N-CH 500V 12A D2PAK | ||
| STB13NM50N-1 | MOSFET N-CH 500V 12A I2PAK |