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| PartNumber | SSM6P15FE(TE85L,F) |
| Description | MOSFET LowON Res MOSFET ID=-.1A VDSS=-30V |
| Manufacturer | Toshiba |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | ES6-6 |
| Number of Channels | 2 Channel |
| Transistor Polarity | P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V |
| Id Continuous Drain Current | 100 mA |
| Rds On Drain Source Resistance | 8 Ohms |
| Vgs th Gate Source Threshold Voltage | 1.7 V |
| Vgs Gate Source Voltage | 20 V |
| Minimum Operating Temperature | - |
| Maximum Operating Temperature | + 150 C |
| Pd Power Dissipation | 150 mW |
| Configuration | Dual |
| Channel Mode | Enhancement |
| Packaging | Reel |
| Height | 0.55 mm |
| Length | 1.6 mm |
| Series | SSM6P15 |
| Transistor Type | 2 P-Channel |
| Width | 1.2 mm |
| Brand | Toshiba |
| Forward Transconductance Min | 20 mS |
| Product Type | MOSFET |
| Factory Pack Quantity | 4000 |
| Subcategory | MOSFETs |
| Typical Turn Off Delay Time | 175 ns |
| Typical Turn On Delay Time | 65 ns |
| Unit Weight | 0.000106 oz |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Toshiba |
SSM6P15FE(TE85L,F) | MOSFET LowON Res MOSFET ID=-.1A VDSS=-30V | |
| SSM6P15FE(TE85L,F) | Жаңа және түпнұсқа |