SSH70N1

SSH70N10A vs SSH70N10 vs SSH70N10A FQA70N10

 
PartNumberSSH70N10ASSH70N10SSH70N10A FQA70N10
DescriptionMOSFET NCh/100V/70a/.023Ohm
ManufacturerON SemiconductorFAI-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiMOSFET (Metal Oxide)-
Mounting StyleThrough Hole--
Package / CaseTO-3PN-3TO-3P-3, SC-65-3-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current70 A--
Rds On Drain Source Resistance23 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation300 W--
ConfigurationSingle--
PackagingTubeTube-
Height20.1 mm--
Length16.2 mm--
SeriesSSH70N10A--
Transistor Type1 N-Channel--
TypeMOSFET--
Width5 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min53.51 S--
Fall Time84 ns--
Product TypeMOSFET--
Rise Time24 ns--
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time112 ns--
Typical Turn On Delay Time22 ns--
Part # AliasesSSH70N10A_NL--
Unit Weight0.225789 oz--
Part Status-Obsolete-
FET Type-N-Channel-
Drain to Source Voltage (Vdss)-100V-
Current Continuous Drain (Id) @ 25°C-70A (Tc)-
Drive Voltage (Max Rds On, Min Rds On)-10V-
Vgs(th) (Max) @ Id-4V @ 250A-
Gate Charge (Qg) (Max) @ Vgs-195nC @ 10V-
Vgs (Max)---
Input Capacitance (Ciss) (Max) @ Vds-4870pF @ 25V-
FET Feature---
Power Dissipation (Max)-300W (Tc)-
Rds On (Max) @ Id, Vgs-23 mOhm @ 35A, 10V-
Operating Temperature--55°C ~ 175°C (TJ)-
Mounting Type-Through Hole-
Supplier Device Package-TO-3P-
Өндіруші Бөлім № Сипаттама RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
SSH70N10A MOSFET NCh/100V/70a/.023Ohm
SSH70N10 Жаңа және түпнұсқа
SSH70N10A FQA70N10 Жаңа және түпнұсқа
ON Semiconductor
ON Semiconductor
SSH70N10A MOSFET N-CH 100V 70A TO-3
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