 |  | | |
| PartNumber | SSD2009ATF | SSD2009 | SSD2009ATF. |
| Description | MOSFET N-Ch/50V/3a 0.13Ohm@VGS=10V | ||
| Manufacturer | ON Semiconductor | - | SAMSUNG |
| Product Category | MOSFET | - | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 50 V | - | - |
| Id Continuous Drain Current | 3 A | - | - |
| Rds On Drain Source Resistance | 130 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 3.9 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 7 S | - | - |
| Fall Time | 23 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 16 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 40 ns | - | - |
| Typical Turn On Delay Time | 16 ns | - | - |
| Unit Weight | 0.002998 oz | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
SSD2009ATF | MOSFET N-Ch/50V/3a 0.13Ohm@VGS=10V | |
| SSD2009 | Жаңа және түпнұсқа | ||
| SSD2009TF | Жаңа және түпнұсқа | ||
| SSD2009ATF. | Жаңа және түпнұсқа | ||
ON Semiconductor |
SSD2009ATF | MOSFET 2N-CH 50V 3A 8-SOIC |