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| PartNumber | SQD90P04-9m4L_GE3 | SQD90P04_9M4LT4GE3 | SQD90P04-9M4L-GE3 |
| Description | MOSFET P-Channel 40V AEC-Q101 Qualified | MOSFET -40V Vds 20V Vgs TO-252 | MOSFET RECOMMENDED ALT 78-SQD90P04-9M4L_GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 90 A | 90 A | - |
| Rds On Drain Source Resistance | 7.5 mOhms | 9.4 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - 2.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 155 nC | 155 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 136 W | 136 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | - | Reel |
| Series | SQ | SQ | SQ |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 46 S | 46 S | - |
| Fall Time | 19 ns | 19 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 15 ns | 15 ns | - |
| Factory Pack Quantity | 2000 | 1 | 2000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 61 ns | 61 ns | - |
| Typical Turn On Delay Time | 13 ns | 13 ns | - |
| Unit Weight | 0.011993 oz | - | 0.050717 oz |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQD97N06-6m3L_GE3 | MOSFET 60V 97A 136W AEC-Q101 Qualified | |
| SQD90P04-9m4L_GE3 | MOSFET P-Channel 40V AEC-Q101 Qualified | ||
| SQD90P04_9M4LT4GE3 | MOSFET -40V Vds 20V Vgs TO-252 | ||
| SQD90P04-9M4L-GE3 | MOSFET RECOMMENDED ALT 78-SQD90P04-9M4L_GE3 | ||
| SQD97N06-6M3L-GE3 | MOSFET RECOMMENDED ALT 78-SQD97N06-6M3L_GE3 | ||
| SQD97N06-6M3L-GE3 | RF Bipolar Transistors MOSFET 60V 97A 136W | ||
| SQD90P04-9M4L | Жаңа және түпнұсқа | ||
| SQD90P04-9M4L-GE3 | Жаңа және түпнұсқа | ||
| SQD97N06-6M3L | Жаңа және түпнұсқа | ||
Vishay |
SQD90P04-9M4L_GE3 | MOSFET P-CH 40V 90A TO252AA | |
| SQD97N06-6M3L_GE3 | MOSFET N-CH 60V 50A TO252 |