 | | |
| PartNumber | SQ3419EV-T1_GE3 | SQ3419EEV-T1-GE3 |
| Description | MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQ3419EV-T1_GE3 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | - |
| Package / Case | TSOP-6 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | - |
| Id Continuous Drain Current | 6.9 A | - |
| Rds On Drain Source Resistance | 48 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 11.3 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 5 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Series | SQ | SQ |
| Transistor Type | 1 P-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 8 S | - |
| Fall Time | 31 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 24 ns | - |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 26 ns | - |
| Typical Turn On Delay Time | 8 ns | - |
| Part # Aliases | - | SQ3419EEV-GE3 |
| Unit Weight | - | 0.000705 oz |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQ3419EV-T1_GE3 | MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified | |
| SQ3419EEV-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQ3419EV-T1_GE3 | ||
Vishay |
SQ3419EV-T1_GE3 | MOSFET P-CH 40V 7.4A 6TSOP | |
| SQ3419EEV-T1-GE3 | MOSFET P-CH 40V 7.4A 6TSOP | ||
| SQ3419EEV | Жаңа және түпнұсқа | ||
| SQ3419EV-T1-GE3 | Жаңа және түпнұсқа |