 |  | | |
| PartNumber | SPW11N60CFDFKSA1 | SPW11N60CFD | SPW11N60CFD,11N60CFD |
| Description | MOSFET LOW POWER_LEGACY | IGBT Transistors MOSFET N-Ch 650V 11A TO247-3 CoolMOS CFD | |
| Manufacturer | Infineon | INFINEON | - |
| Product Category | MOSFET | FETs - Single | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | - | - |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Tube | Tube | - |
| Height | 21.1 mm | - | - |
| Length | 16.13 mm | - | - |
| Width | 5.21 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP000014534 SPW11N60CFDFKSA1 | - | - |
| Unit Weight | 1.340411 oz | 1.340411 oz | - |
| Series | - | CoolMOS CFD | - |
| Part Aliases | - | SP000014534 SPW11N60CFDFKSA1 SPW11N60CFDXK | - |
| Package Case | - | TO-247-3 | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 125 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 7 ns | - |
| Rise Time | - | 18 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 11 A | - |
| Vds Drain Source Breakdown Voltage | - | 650 V | - |
| Rds On Drain Source Resistance | - | 440 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 43 ns | - |
| Typical Turn On Delay Time | - | 34 ns | - |
| Channel Mode | - | Enhancement | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
SPW11N60CFDFKSA1 | MOSFET LOW POWER_LEGACY | |
| SPW11N60CFD | IGBT Transistors MOSFET N-Ch 650V 11A TO247-3 CoolMOS CFD | ||
| SPW11N60CFD,11N60CFD | Жаңа және түпнұсқа | ||
Infineon Technologies |
SPW11N60CFDFKSA1 | MOSFET N-CH 650V 11A TO-247 |