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| PartNumber | SPD09P06PLGBTMA1 | SPD09P06PLGBT | SPD09P06PLG |
| Description | MOSFET P-Ch -60V 9.7A DPAK-2 | POWER FIELD-EFFECT TRANSISTOR, 9.7A I(D), 60V, 0.25OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AB | |
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 9.7 A | - | - |
| Rds On Drain Source Resistance | 200 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 21 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 42 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | XPD09P06 | XPD09P06 | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 1.8 S | - | - |
| Fall Time | 89 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 168 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 49 ns | - | - |
| Typical Turn On Delay Time | 11 ns | - | - |
| Part # Aliases | G SP000443928 SPD09P06PL SPD9P6PLGXT | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Part Aliases | - | G SP000443928 SPD09P06PL SPD09P06PLGXT | - |
| Package Case | - | TO-252-3 | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
SPD09P06PLGBTMA1 | MOSFET P-Ch -60V 9.7A DPAK-2 | |
| SPD09P06PLGBTMA1 | MOSFET P-CH 60V 9.7A TO252-3 | ||
| SPD09P06PLGBT | Жаңа және түпнұсқа | ||
| SPD09P06PLG | POWER FIELD-EFFECT TRANSISTOR, 9.7A I(D), 60V, 0.25OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AB |