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| PartNumber | SPD03N60C3 | SPD03N60C3 03N60C3 INFI | SPD03N60C3,03N60C3 |
| Description | IGBT Transistors MOSFET N-Ch 600V 3.2A DPAK-2 CoolMOS C3 | ||
| Manufacturer | INFINEON | - | - |
| Product Category | FETs - Single | - | - |
| Series | CoolMOS C3 | - | - |
| Packaging | Reel | - | - |
| Part Aliases | SP000308772 SPD03N60C3BTMA1 SPD03N60C3XT | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Tradename | CoolMOS | - | - |
| Package Case | TO-252-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 38 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 12 ns | - | - |
| Rise Time | 3 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 3.2 A | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Rds On Drain Source Resistance | 1.4 Ohms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 64 ns | - | - |
| Typical Turn On Delay Time | 7 ns | - | - |
| Channel Mode | Enhancement | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
SPD03N60C3ATMA1 | MOSFET LOW POWER_LEGACY | |
| SPD03N60C3ATMA1 | MOSFET N-CH 600V 3.2A DPAK | ||
| SPD03N60C3BTMA1 | MOSFET N-CH 650V 3.2A DPAK | ||
| SPD03N60C3 | IGBT Transistors MOSFET N-Ch 600V 3.2A DPAK-2 CoolMOS C3 | ||
| SPD03N60C3 03N60C3 INFI | Жаңа және түпнұсқа | ||
| SPD03N60C3,03N60C3 | Жаңа және түпнұсқа | ||
| SPD03N60C3,03N60C3, | Жаңа және түпнұсқа | ||
| SPD03N60C3INTR | Жаңа және түпнұсқа |