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SMUN5111

SMUN5111T1G vs SMUN5111DW1T1G vs SMUN5111T1

 
PartNumberSMUN5111T1GSMUN5111DW1T1GSMUN5111T1
DescriptionBipolar Transistors - Pre-Biased SRFC MNT BIAS RESTR TRANSBipolar Transistors - Pre-Biased LESHANBE SS BR XSTRBipolar Transistors - Pre-Biased SRFC MNT BIAS RESTR TRANS
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-BiasedTransistors (BJT) - Single, Pre-Biased
RoHSYY-
ConfigurationSingle-Single
Transistor PolarityPNP-PNP
Typical Input Resistor10 kOhms-10 kOhms
Typical Resistor Ratio1-1
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSC-70-3--
DC Collector/Base Gain hfe Min35--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current0.1 A-0.1 A
Pd Power Dissipation202 mW--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesMUN5111MUN5111DW1MUN5111
PackagingReelReelReel
BrandON SemiconductorON Semiconductor-
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased-
QualificationAEC-Q101AEC-Q101-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000219 oz-0.000219 oz
Package Case--SC-70-3
Pd Power Dissipation--202 mW
Collector Emitter Voltage VCEO Max--50 V
DC Collector Base Gain hfe Min--35
Өндіруші Бөлім № Сипаттама RFQ
SMUN5111T1G Bipolar Transistors - Pre-Biased SRFC MNT BIAS RESTR TRANS
SMUN5111DW1T1G Bipolar Transistors - Pre-Biased LESHANBE SS BR XSTR
SMUN5111T1 Bipolar Transistors - Pre-Biased SRFC MNT BIAS RESTR TRANS
ON Semiconductor
ON Semiconductor 		SMUN5111DW1T1G Bipolar Transistors - Pre-Biased LESHANBE SS BR XSTR
SMUN5111T1G Bipolar Transistors - Pre-Biased SRFC MNT BIAS RESTR TRANS
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