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| PartNumber | SIZ700 | SIZ700DI-T1-GE3 | SIZ700DT |
| Description | |||
| Manufacturer | Vishay Siliconix | - | - |
| Product Category | FETs - Arrays | - | - |
| Series | TrenchFETR | - | - |
| Packaging | Tape & Reel (TR) | - | - |
| Part Aliases | SIZ700DT-GE3 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | 6-PowerPair | - | - |
| Technology | Si | - | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
| Mounting Type | Surface Mount | - | - |
| Number of Channels | 2 Channel | - | - |
| Supplier Device Package | 6-PowerPair | - | - |
| Configuration | Dual | - | - |
| FET Type | 2 N-Channel (Half Bridge) | - | - |
| Power Max | 2.36W, 2.8W | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Drain to Source Voltage Vdss | 20V | - | - |
| Input Capacitance Ciss Vds | 1300pF @ 10V | - | - |
| FET Feature | Standard | - | - |
| Current Continuous Drain Id 25°C | 16A | - | - |
| Rds On Max Id Vgs | 8.6 mOhm @ 15A, 10V | - | - |
| Vgs th Max Id | 2.2V @ 250μA | - | - |
| Gate Charge Qg Vgs | 35nC @ 10V | - | - |
| Pd Power Dissipation | 2.36 W 2.8 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 8 ns 10 ns | - | - |
| Rise Time | 9 ns 8 ns | - | - |
| Vgs Gate Source Voltage | 16 V | - | - |
| Id Continuous Drain Current | 16 A | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Rds On Drain Source Resistance | 7 mOhms 4.7 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 25 ns 47 ns | - | - |
| Typical Turn On Delay Time | 8 ns 12 ns | - | - |
| Forward Transconductance Min | 60 S 100 S | - | - |
| Channel Mode | Enhancement | - | - |