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| PartNumber | SISA18ADN-T1-GE3 | SISA18ADNT1GE3 | SISA18DN-T1-GE3 |
| Description | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | Power Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | MOSFET N-CH 30V 38.3A 1212-8 |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-1212-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 38.3 A | - | - |
| Rds On Drain Source Resistance | 6 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 20 V, - 16 V | - | - |
| Qg Gate Charge | 21.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 19.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Height | 1.04 mm | - | - |
| Length | 3.3 mm | - | - |
| Series | SIS | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.3 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 54 S | - | - |
| Fall Time | 7 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 15 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SISA18ADN-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | |
| SISA18ADNT1GE3 | Power Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SISA18JN-T1-GE3 | Жаңа және түпнұсқа | ||
Vishay |
SISA18DN-T1-GE3 | MOSFET N-CH 30V 38.3A 1212-8 | |
| SISA18ADN-T1-GE3 | MOSFET N-CH 30V 38.3A 1212-8 |