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| PartNumber | SIR866DP | SIR866DP-T1-E3 | SIR866DP-T1-GE3 |
| Description | MOSFET N-CH 20V 60A PPAK SO-8 | ||
| Manufacturer | - | - | VISHAY |
| Product Category | - | - | FETs - Single |
| Series | - | - | SIRxxxDP |
| Packaging | - | - | Reel |
| Part Aliases | - | - | SIR866DP-GE3 |
| Unit Weight | - | - | 0.017870 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | SO-8 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single Quad Drain Triple Source |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 5.4 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 49 ns |
| Rise Time | - | - | 23 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 60 A |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Rds On Drain Source Resistance | - | - | 20.5 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 66 ns |
| Typical Turn On Delay Time | - | - | 42 ns |
| Forward Transconductance Min | - | - | 78 S |
| Channel Mode | - | - | Enhancement |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
| SIR866DP | Жаңа және түпнұсқа | ||
| SIR866DP-T1-E3 | Жаңа және түпнұсқа | ||
| SIR866DPT1GE3 | Power Field-Effect Transistor, 39A I(D), 20V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
Vishay |
SIR866DP-T1-GE3 | MOSFET N-CH 20V 60A PPAK SO-8 |