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| PartNumber | SIR164DP-T1-GE3 | SIR164ADP-T1-GE3 | SIR164DP-T1-RE3 |
| Description | MOSFET 30V 50A 69W 2.5mohm @ 10V | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | MOSFET 30V Vds TrenchFET PowerPAK SO-8 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 | SO-8 |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Packaging | Reel | Reel | Reel |
| Height | 1.04 mm | - | - |
| Length | 6.15 mm | - | - |
| Series | SIR | SIR | SIR |
| Width | 5.15 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | SIR164DP-GE3 | - | - |
| Unit Weight | 0.017870 oz | - | 0.002610 oz |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 30 V | 30 V |
| Id Continuous Drain Current | - | 40 A | 50 A |
| Rds On Drain Source Resistance | - | 2.2 mOhms | 20.5 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 1.1 V | 2.5 V |
| Vgs Gate Source Voltage | - | 20 V, - 16 V | 20 V |
| Qg Gate Charge | - | 77 nC | 82 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 62.5 W | 69 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | - |
| Forward Transconductance Min | - | 105 S | - |
| Fall Time | - | 8 ns | 39 ns |
| Rise Time | - | 10 ns | 41 ns |
| Typical Turn Off Delay Time | - | 30 ns | 52 ns |
| Typical Turn On Delay Time | - | 12 ns | 35 ns |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIR165DP-T1-GE3 | MOSFET -30V Vds 20V Vgs PowerPAK SO-8 | |
| SIR164DP-T1-GE3 | MOSFET 30V 50A 69W 2.5mohm @ 10V | ||
| SIR166DP-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | ||
| SIR164ADP-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | ||
| SIR167DP-T1-GE3 | MOSFET -30V Vds 25V Vgs PowerPAK SO-8 | ||
| SIR164DP-T1-RE3 | MOSFET 30V Vds TrenchFET PowerPAK SO-8 | ||
Vishay |
SIR166DP-T1-GE3 | Darlington Transistors MOSFET 30V 40A N-CH MOSFET | |
| SIR168DP-T1-GE3 | IGBT Transistors MOSFET 30V 40A 34.7W 4.4mohm @ 10V | ||
| SIR165DP-T1-GE3 | MOSFET P-CHAN 30V POWERPAK SO-8 | ||
| SIR167DP-T1-GE3 | MOSFET P-CHAN 30V POWERPAK SO-8 | ||
| SIR164DP-T1-GE3 | Trans MOSFET N-CH 30V 33.3A 8-Pin PowerPAK SO T/R | ||
| SIR164DP-T1-RE3 | MOSFET N-CH 30V 50A POWERPAKSO-8 | ||
| SIR164DP | Жаңа және түпнұсқа | ||
| SIR164DP-T1-E3 | Жаңа және түпнұсқа | ||
| SIR164DY-T1-GE3 | Жаңа және түпнұсқа | ||
| SIR166DP | Жаңа және түпнұсқа | ||
| SIR166DP-T1-E3 | Жаңа және түпнұсқа | ||
| SIR166DY | Жаңа және түпнұсқа | ||
| SIR168DP | Жаңа және түпнұсқа |