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| PartNumber | SIHP17N80E-GE3 | SIHP17N60D-E3 | SIHP17N60D-GE3 |
| Description | MOSFET 800V Vds 30V Vgs TO-220AB | MOSFET 600V Vds 30V Vgs TO-220AB | MOSFET 600V Vds 30V Vgs TO-220AB |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220AB-3 | TO-220AB-3 | TO-220AB-3 |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | 600 V | 600 V |
| Id Continuous Drain Current | 15 A | 17 A | 17 A |
| Rds On Drain Source Resistance | 250 mOhms | 340 mOhms | 340 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 5 V | 5 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 122 nC | 45 nC | 45 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 208 W | 277.8 W | 277.8 W |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Tube |
| Series | E | D | D |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 26 ns | 30 ns | 30 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 24 ns | 56 ns | 56 ns |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 71 ns | 37 ns | 37 ns |
| Typical Turn On Delay Time | 22 ns | 22 ns | 22 ns |
| Unit Weight | 0.063493 oz | 0.211644 oz | 0.211644 oz |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHP17N80E-GE3 | MOSFET 800V Vds 30V Vgs TO-220AB | |
| SIHP17N60D-E3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
| SIHP17N60D-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
Vishay |
SIHP17N60D-E3 | IGBT Transistors MOSFET 600V 340mOhm@10V 17A N-Ch D-SRS | |
| SIHP17N60D-GE3 | RF Bipolar Transistors MOSFET 600V 17A 277.8W 340mOhm @10V | ||
| SIHP17N80E-GE3 | MOSFET N-CH 800V 15A TO220AB | ||
| SIHP17N60D | Жаңа және түпнұсқа |