 | |  | |
| PartNumber | SIHB15N60E-GE3 | SIHB15N65E-GE3 | SIHB15N50E-GE3 |
| Description | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | MOSFET 650V Vds 30V Vgs D2PAK (TO-263) | IGBT Transistors MOSFET N-Channel 500V |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | 700 V | - |
| Id Continuous Drain Current | 15 A | 15 A | - |
| Rds On Drain Source Resistance | 280 mOhms | 280 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 39 nC | 48 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 180 W | 34 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Bulk | - |
| Series | E | E | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Fall Time | 22 ns | 25 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 26 ns | 24 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 41 ns | 48 ns | - |
| Typical Turn On Delay Time | 16 ns | 18 ns | - |
| Unit Weight | 0.050717 oz | 0.050717 oz | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHB15N60E-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | |
| SIHB15N65E-GE3 | MOSFET 650V Vds 30V Vgs D2PAK (TO-263) | ||
Vishay |
SIHB15N50E-GE3 | IGBT Transistors MOSFET N-Channel 500V | |
| SIHB15N65E-GE3 | RF Bipolar Transistors MOSFET 650V 280mOhm@10V 15A N-Ch E-SRS | ||
| SIHB15N60E-GE3 | MOSFET N-CH 600V 15A DPAK | ||
| SIHB15N60E-GE3-CUT TAPE | Жаңа және түпнұсқа | ||
| SIHB15N60E | Жаңа және түпнұсқа | ||
| SIHB15N60EGE3 | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| SIHB15N65E | Жаңа және түпнұсқа |