| PartNumber | SIDR390DP-T1-RE3 | SIDR392DP-T1-GE3 | SIDR390DP-T1-GE3 |
| Description | MOSFET N-Channel 30 V (D-S) MOSFET | MOSFET 30V Vds 20V Vgs PowerPAK SO-8DC | MOSFET 30V Vds 20V Vgs PowerPAK SO-8DC |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8DC-8 | PowerPAK-SO-8DC-8 | PowerPAK-SO-8DC-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 100 A | 100 A | 100 A |
| Rds On Drain Source Resistance | 1.15 mOhms | 620 uOhms | 1.15 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 1 V | 800 mV |
| Vgs Gate Source Voltage | 4.5 V | 10 V | 4.5 V |
| Qg Gate Charge | 102 nC | 125 nC | 102 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SID | SID | SID |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 27 ns | 12 ns | 27 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 63 ns | 23 ns | 63 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 78 ns | 41 ns | 78 ns |
| Typical Turn On Delay Time | 51 ns | 17 ns | 51 ns |
| Pd Power Dissipation | - | 125 W | 125 W |
| Transistor Type | - | 1 N-Channel1 N-Channel | 1 N-Channel |
| Forward Transconductance Min | - | 125 S | - |