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| PartNumber | SIA415DJ-T1-GE3 | SIA415DJ-T1-GE3-CUT TAPE | SIA415DJ-E3 |
| Description | IGBT Transistors MOSFET 20V 12A 19W 35mohm @ 4.5V | ||
| Manufacturer | VISHAY | - | - |
| Product Category | FETs - Single | - | - |
| Series | TrenchFETR | - | - |
| Packaging | Digi-ReelR Alternate Packaging | - | - |
| Part Aliases | SIA415DJ-GE3 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | PowerPAKR SC-70-6 | - | - |
| Technology | Si | - | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
| Mounting Type | Surface Mount | - | - |
| Number of Channels | 1 Channel | - | - |
| Supplier Device Package | PowerPAKR SC-70-6 Single | - | - |
| Configuration | Single | - | - |
| FET Type | MOSFET P-Channel, Metal Oxide | - | - |
| Power Max | 19W | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Drain to Source Voltage Vdss | 20V | - | - |
| Input Capacitance Ciss Vds | 1250pF @ 10V | - | - |
| FET Feature | Standard | - | - |
| Current Continuous Drain Id 25°C | 12A (Tc) | - | - |
| Rds On Max Id Vgs | 35 mOhm @ 5.6A, 4.5V | - | - |
| Vgs th Max Id | 1.5V @ 250μA | - | - |
| Gate Charge Qg Vgs | 47nC @ 10V | - | - |
| Pd Power Dissipation | 19 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 20 ns | - | - |
| Rise Time | 50 ns | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Id Continuous Drain Current | 12 A | - | - |
| Vds Drain Source Breakdown Voltage | - 20 V | - | - |
| Rds On Drain Source Resistance | 35 mOhms | - | - |
| Transistor Polarity | P-Channel | - | - |
| Typical Turn Off Delay Time | 45 ns | - | - |
| Typical Turn On Delay Time | 25 ns | - | - |
| Forward Transconductance Min | 20 S | - | - |
| Channel Mode | Enhancement | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Vishay |
SIA415DJ-T1-GE3 | IGBT Transistors MOSFET 20V 12A 19W 35mohm @ 4.5V | |
| SIA415DJ-T1-GE3-CUT TAPE | Жаңа және түпнұсқа | ||
| SIA415DJ-E3 | Жаңа және түпнұсқа |