 |  | | |
| PartNumber | SI4823DY-T1 | SI4823DY-T1-E3 | SI4823DY-T1-GE3 |
| Description | MOSFET P-CH 20V 4.1A 8-SOIC | MOSFET P-CH 20V 4.1A 8-SOIC | |
| Manufacturer | - | VISHAY | - |
| Product Category | - | FETs - Single | - |
| Packaging | - | Reel | - |
| Part Aliases | - | SI4823DY-E3 | - |
| Unit Weight | - | 0.006596 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | SOIC-Narrow-8 | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single with Schottky Diode | - |
| Transistor Type | - | 1 P-Channel | - |
| Pd Power Dissipation | - | 2.8 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 40 ns | - |
| Rise Time | - | 40 ns | - |
| Vgs Gate Source Voltage | - | 12 V | - |
| Id Continuous Drain Current | - | 3.3 A | - |
| Vds Drain Source Breakdown Voltage | - | - 20 V | - |
| Rds On Drain Source Resistance | - | 108 mOhms | - |
| Transistor Polarity | - | P-Channel | - |
| Typical Turn Off Delay Time | - | 18 ns | - |
| Typical Turn On Delay Time | - | 18 ns | - |
| Channel Mode | - | Enhancement | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
| SI4823DY-T1 | Жаңа және түпнұсқа | ||
Vishay |
SI4823DY-T1-E3 | MOSFET P-CH 20V 4.1A 8-SOIC | |
| SI4823DY-T1-GE3 | MOSFET P-CH 20V 4.1A 8-SOIC |