 | | | |
| PartNumber | SI4662DY-T1-E3 | SI4662DY-T1-GE3 | SI4660DY-T1-E3 |
| Description | MOSFET 30V 18.6A 6.25W | MOSFET 30V 18.6A 6.25W 10mohm @ 10V | MOSFET RECOMMENDED ALT 781-SI4168DY-T1-GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | E |
| Technology | Si | Si | Si |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SI4 | SI4 | SI4 |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | SI4662DY-E3 | SI4662DY-GE3 | SI4660DY-E3 |
| Unit Weight | 0.006596 oz | 0.006596 oz | 0.006596 oz |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | SO-8 | - |
| Height | - | 1.75 mm | - |
| Length | - | 4.9 mm | - |
| Width | - | 3.9 mm | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4662DY-T1-E3 | MOSFET 30V 18.6A 6.25W | |
| SI4668DY-T1-GE3 | MOSFET 25V 16.2A 5.0W 10.5mohm @ 10V | ||
| SI4662DY-T1-GE3 | MOSFET 30V 18.6A 6.25W 10mohm @ 10V | ||
| SI4668DY-T1-E3 | MOSFET 25V 16.2A 5.0W | ||
| SI4660DY-T1-E3 | MOSFET RECOMMENDED ALT 781-SI4168DY-T1-GE3 | ||
Vishay |
SI4668DY-T1-E3 | RF Bipolar Transistors MOSFET 25V 16.2A 5.0W | |
| SI4668DY-T1-GE3 | RF Bipolar Transistors MOSFET 25V 16.2A 5.0W 10.5mohm @ 10V | ||
| SI4660DY-T1-E3 | RF Bipolar Transistors MOSFET 25V 23.1A 5.6W | ||
| SI4666DY-T1-GE3 | MOSFET N-CH 25V 16.5A 8-SOIC | ||
| SI4660DY-T1-GE3 | MOSFET N-CH 25V 23.1A 8-SOIC | ||
| SI4662DY-T1-GE3 | RF Bipolar Transistors MOSFET 30V 18.6A 6.25W 10mohm @ 10V | ||
| SI4662DY-T1-E3 | RF Bipolar Transistors MOSFET 30V 18.6A 6.25W | ||
| SI466 | Жаңа және түпнұсқа | ||
| SI4662DY-T1-E3 GE3 | Жаңа және түпнұсқа | ||
| SI4666 | Жаңа және түпнұсқа | ||
| SI466A | Жаңа және түпнұсқа |