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| PartNumber | SI4401DDY-T1-GE3 | SI4401DY-T1-E3 | SI4401DY-T1-GE3 |
| Description | MOSFET -40V Vds 20V Vgs SO-8 | MOSFET RECOMMENDED ALT 781-SI4401DDY-T1-GE3 | IGBT Transistors MOSFET 40V 10.5A 3.0W 15.5mohm @ 10V |
| Manufacturer | Vishay | Vishay | Vishay / Siliconix |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | E | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SO-8 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | P-Channel | - | P-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 16.1 A | - | - |
| Rds On Drain Source Resistance | 15 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 64 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 6.3 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | Reel |
| Series | SI4 | SI4 | - |
| Transistor Type | 1 P-Channel | - | 1 P-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 37 S | - | - |
| Fall Time | 9 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 11 ns | - | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 45 ns | - | - |
| Typical Turn On Delay Time | 13 ns | - | - |
| Part # Aliases | SI4401DDY-GE3 | SI4401DY-E3 | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | 0.017870 oz |
| Part Aliases | - | - | SI4401DY-GE3 |
| Package Case | - | - | SO-8 |
| Pd Power Dissipation | - | - | 1.5 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 8.7 A |
| Vds Drain Source Breakdown Voltage | - | - | - 40 V |
| Rds On Drain Source Resistance | - | - | 15.5 mOhms |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4401DDY-T1-GE3 | MOSFET -40V Vds 20V Vgs SO-8 | |
| SI4401DY-T1-E3 | MOSFET RECOMMENDED ALT 781-SI4401DDY-T1-GE3 | ||
Vishay |
SI4401DDY-T1-GE3 | IGBT Transistors MOSFET 40V 16.1A P-CH MOSFET | |
| SI4401DY-T1-GE3 | IGBT Transistors MOSFET 40V 10.5A 3.0W 15.5mohm @ 10V | ||
| SI4401DY-T1-E3 | MOSFET P-CH 40V 8.7A 8-SOIC | ||
| SI4401DDY-T1-GE3-CUT TAPE | Жаңа және түпнұсқа | ||
| SI4401DDY | Жаңа және түпнұсқа | ||
| SI4401DDY-T1-E3 | Жаңа және түпнұсқа | ||
| SI4401DY | MOSFET 40V 10.5A 3W | ||
| SI4401DY-T1 | MOSFET 40V 10.5A 3W | ||
| SI4401DY-TI-E3 | Жаңа және түпнұсқа | ||
| SI4401DYT1 | Small Signal Field-Effect Transistor, 8.7A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |