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| PartNumber | SI4154DY-T1-GE3 | SI4153-TP | SI4156DY-T1-GE3 |
| Description | MOSFET 40V Vds 20V Vgs SO-8 | MOSFET N-Ch Enh FET 20Vdss 6Vgss 0.9215A 150mW | MOSFET 30V Vds 20V Vgs SO-8 |
| Manufacturer | Vishay | Micro Commercial Components (MCC) | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SOT-523-3 | SO-8 |
| Tradename | TrenchFET | - | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 1.75 mm | - | 1.75 mm |
| Length | 4.9 mm | - | 4.9 mm |
| Series | SI4 | N-Ch Polarity | SI4 |
| Width | 3.9 mm | - | 3.9 mm |
| Brand | Vishay / Siliconix | Micro Commercial Components (MCC) | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 30000 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | SI4154DY-GE3 | - | SI4156DY-GE3 |
| Unit Weight | 0.006596 oz | - | 0.017870 oz |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 0.915 A | - |
| Rds On Drain Source Resistance | - | 570 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 0.45 V | - |
| Vgs Gate Source Voltage | - | 4.5 V | - |
| Qg Gate Charge | - | 1.82 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 150 mW | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N- Channel | - |
| Forward Transconductance Min | - | 0.5 S | - |
| Fall Time | - | 7.6 ns | - |
| Rise Time | - | 4.4 ns | - |
| Typical Turn Off Delay Time | - | 25 ns | - |
| Typical Turn On Delay Time | - | 3.7 ns | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4154DY-T1-GE3 | MOSFET 40V Vds 20V Vgs SO-8 | |
| SI4158DY-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI4186DY-GE3 | ||
| SI4156DY-T1-GE3 | MOSFET 30V Vds 20V Vgs SO-8 | ||
Micro Commercial Components (MCC) |
SI4153-TP | MOSFET N-Ch Enh FET 20Vdss 6Vgss 0.9215A 150mW | |
Vishay |
SI4158DY-T1-GE3 | RF Bipolar Transistors MOSFET 20V 36.5A 6.0W 2.5mohm @ 10V | |
| SI4154DY-T1-GE3 | MOSFET N-CH 40V 36A 8-SOIC | ||
| SI4156DY-T1-GE3 | MOSFET N-CH 30V 24A 8-SOIC | ||
| SI415 | Жаңа және түпнұсқа | ||
| SI4153-TP | MOSFET N-Ch Enh FET 20Vdss 6Vgss 0.9215A 150mW | ||
| SI4154 | Жаңа және түпнұсқа | ||
| SI4154DY | Жаңа және түпнұсқа | ||
| SI4156DY-T-GE3 | Жаңа және түпнұсқа | ||
| SI4156DY-T1-E3 | Жаңа және түпнұсқа | ||
| SI415A | Жаңа және түпнұсқа |