 |  | | |
| PartNumber | SI1407DL-T1-E3 | SI1407DL | SI1407DL-T1 |
| Description | MOSFET 12V 1.8A | ||
| Manufacturer | Vishay | - | Vishay / Siliconix |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOT-363-6 | - | - |
| Tradename | TrenchFET | - | TrenchFET |
| Packaging | Reel | - | Reel |
| Height | 1 mm | - | - |
| Length | 2.1 mm | - | - |
| Series | SI1 | - | - |
| Width | 1.25 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SI1407DL-T1 | - | - |
| Unit Weight | 0.000265 oz | - | 0.000265 oz |
| Part Aliases | - | - | SI1407DL-T1 |
| Package Case | - | - | SOT-363-6 |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 P-Channel |
| Pd Power Dissipation | - | - | 568 mW |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 33 ns |
| Rise Time | - | - | 33 ns |
| Vgs Gate Source Voltage | - | - | 8 V |
| Id Continuous Drain Current | - | - | 1.6 A |
| Vds Drain Source Breakdown Voltage | - | - | - 12 V |
| Rds On Drain Source Resistance | - | - | 130 mOhms |
| Transistor Polarity | - | - | P-Channel |
| Typical Turn Off Delay Time | - | - | 32 ns |
| Typical Turn On Delay Time | - | - | 8 ns |
| Channel Mode | - | - | Enhancement |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI1407DL-T1-E3 | MOSFET 12V 1.8A | |
| SI1407DL | Жаңа және түпнұсқа | ||
| SI1407DL-T1 | Жаңа және түпнұсқа | ||
| SI1407DL-T1-E3 | MOSFET 12V 1.8A | ||
| SI1407DLT | Жаңа және түпнұсқа |