 |  | | |
| PartNumber | SI1016CX-T1-GE3 | SI1016 | SI1016CX |
| Description | MOSFET 20V Vds 8V Vgs SC89-6 N&P PAIR | ||
| Manufacturer | Vishay | Vishay Siliconix | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SC-89-6 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel, P-Channel | N-Channel P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 350 mA, 500 mA | - | - |
| Rds On Drain Source Resistance | 396 mOhms, 756 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 400 mV | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 1.3 nC, 1.65 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 220 mW | - | - |
| Configuration | Dual | N-Channel P-Channel | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Series | SI1 | TrenchFETR | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel 1 P-Channel | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 1 S, 2 S | - | - |
| Fall Time | 8 ns, 11 ns | 11 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns, 16 ns | 16 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 10 ns, 26 ns | 26 ns | - |
| Typical Turn On Delay Time | 9 ns, 11 ns | 11 ns | - |
| Unit Weight | 0.000106 oz | 0.000289 oz | - |
| Package Case | - | SOT-563, SOT-666 | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SC-89-6 | - |
| FET Type | - | N and P-Channel | - |
| Power Max | - | 220mW | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | 43pF @ 10V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | - | - |
| Rds On Max Id Vgs | - | 396 mOhm @ 500mA, 4.5V | - |
| Vgs th Max Id | - | 1V @ 250μA | - |
| Gate Charge Qg Vgs | - | 2nC @ 4.5V | - |
| Pd Power Dissipation | - | 220 mW | - |
| Vgs Gate Source Voltage | - | 8 V | - |
| Id Continuous Drain Current | - | 600 mA | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Vgs th Gate Source Threshold Voltage | - | 0.4 V to 1 V - 0.4 V to - 1 V | - |
| Rds On Drain Source Resistance | - | 330 mOhms 630 mOhms | - |
| Qg Gate Charge | - | 0.75 nC 1 nC | - |
| Forward Transconductance Min | - | 2 S 1 S | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI1016X-T1-GE3 | MOSFET N/P-Ch MOSFET 700/1200 [email protected] | |
| SI1016CX-T1-GE3 | MOSFET 20V Vds 8V Vgs SC89-6 N&P PAIR | ||
| SI1016X-T1-E3 | MOSFET RECOMMENDED ALT 781-SI1016X-T1-GE3 | ||
| SI1016 | Жаңа және түпнұсқа | ||
| SI1016CX | Жаңа және түпнұсқа | ||
| SI1016X | Жаңа және түпнұсқа | ||
| SI1016X-T1 | MOSFET RECOMMENDED ALT 781-SI1016X-T1-GE3 | ||
| SI1016CX-T1-GE3-CUT TAPE | Жаңа және түпнұсқа | ||
Vishay |
SI1016CX-T1-GE3 | MOSFET N/P-CH 20V SC89-6 | |
| SI1016X-T1-E3 | MOSFET N/P-CH 20V SOT563F | ||
| SI1016X-T1-GE3 | MOSFET N/P-CH 20V SC89-6 |