SH8J66

SH8J66TB1 vs SH8J66 vs SH8J66TB

 
PartNumberSH8J66TB1SH8J66SH8J66TB
DescriptionMOSFET Pch+Pch -30V -9A MOSFET
ManufacturerROHM SemiconductorRohm Semiconductor-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOP-8--
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current9 A--
Rds On Drain Source Resistance19 mOhms--
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2 W--
PackagingReelDigi-ReelR Alternate Packaging-
BrandROHM Semiconductor--
Forward Transconductance Min11 S--
Product TypeMOSFET--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Unit Weight0.030018 oz0.030018 oz-
Series-SH8J66-
Package Case-8-SOIC (0.154", 3.90mm Width)-
Operating Temperature-150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-8-SOP-
FET Type-2 P-Channel (Dual)-
Power Max-2W-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds-3000pF @ 10V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-9A-
Rds On Max Id Vgs-18.5 mOhm @ 9A, 10V-
Vgs th Max Id-2.5V @ 1mA-
Gate Charge Qg Vgs-35nC @ 5V-
Pd Power Dissipation-2 W-
Id Continuous Drain Current-9 A-
Vds Drain Source Breakdown Voltage-- 30 V-
Rds On Drain Source Resistance-19 mOhms-
Forward Transconductance Min-11 S-
Өндіруші Бөлім № Сипаттама RFQ
SH8J66TB1 MOSFET Pch+Pch -30V -9A MOSFET
SH8J66 Жаңа және түпнұсқа
SH8J66TB Жаңа және түпнұсқа
SH8J66TB1 MOSFET 2P-CH 30V 9A SOP8
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