SGW23

SGW23N60UFDTM vs SGW23N60UF vs SGW23N60UFD

 
PartNumberSGW23N60UFDTMSGW23N60UFSGW23N60UFD
DescriptionIGBT Transistors 600V/ 12A
ManufacturerON SemiconductorFSCFairchild Semiconductor
Product CategoryIGBT TransistorsIGBTs - SingleIC Chips
RoHSE--
TechnologySi--
Package / CaseD2PAK-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.1 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C23 A--
Pd Power Dissipation100 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingReel-Tape & Reel (TR)
Continuous Collector Current Ic Max23 A--
Height4.83 mm--
Length10.67 mm--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current23 A--
Gate Emitter Leakage Current+/- 100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity800--
SubcategoryIGBTs--
Unit Weight0.079014 oz--
Series---
Package Case--TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--D2PAK
Power Max--100W
Reverse Recovery Time trr--60ns
Current Collector Ic Max--23A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--92A
Vce on Max Vge Ic--2.6V @ 15V, 12A
Switching Energy--115μJ (on), 135μJ (off)
Gate Charge--49nC
Td on off 25°C--17ns/60ns
Test Condition--300V, 12A, 23 Ohm, 15V
Өндіруші Бөлім № Сипаттама RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
SGW23N60UFDTM IGBT Transistors 600V/ 12A
SGW23N60UF Жаңа және түпнұсқа
SGW23N60UFD Жаңа және түпнұсқа
ON Semiconductor
ON Semiconductor
SGW23N60UFDTM IGBT 600V 23A 100W D2PAK
SGW23N60UFTM Жаңа және түпнұсқа
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