RN49A2

RN49A2,LF(CT vs RN49A2LF(CTCT-ND vs RN49A2

 
PartNumberRN49A2,LF(CTRN49A2LF(CTCT-NDRN49A2
DescriptionBipolar Transistors - Pre-Biased Bias Resistor Built- in Transistor, 2in1
ManufacturerToshiba-Toshiba Semiconductor and Storage
Product CategoryBipolar Transistors - Pre-Biased-Transistors (BJT) - Arrays, Pre-Biased
RoHSY--
ConfigurationDual--
Transistor PolarityNPN, PNP--
Mounting StyleSMD/SMT--
Package / CaseSOT-363-6--
DC Collector/Base Gain hfe Min80--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Pd Power Dissipation200 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesRN49--
PackagingReel-Digi-ReelR Alternate Packaging
Collector Base Voltage VCBO50 V, - 50 V--
Emitter Base Voltage VEBO10 V, - 5 V--
BrandToshiba--
Maximum DC Collector Current100 mA--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000265 oz--
Package Case--6-TSSOP, SC-88, SOT-363
Mounting Type--Surface Mount
Supplier Device Package--US6
Power Max--200mW
Transistor Type--1 NPN, 1 PNP - Pre-Biased (Dual)
Current Collector Ic Max--100mA
Voltage Collector Emitter Breakdown Max--50V
Resistor Base R1 Ohms--47k
Resistor Emitter Base R2 Ohms--47k
DC Current Gain hFE Min Ic Vce--80 @ 10mA, 5V
Vce Saturation Max Ib Ic--300mV @ 250μA, 5mA
Current Collector Cutoff Max--100μA (ICBO)
Frequency Transition--250MHz, 200MHz
Өндіруші Бөлім № Сипаттама RFQ
Toshiba
Toshiba
RN49A2,LF(CT Bipolar Transistors - Pre-Biased Bias Resistor Built- in Transistor, 2in1
RN49A2T5LFT Bipolar Transistors - Pre-Biased BRT PNP NPN 100mA -50V
RN49A2LF(CTCT-ND Жаңа және түпнұсқа
RN49A2LF(CTDKR-ND Жаңа және түпнұсқа
RN49A2LF(CTTR-ND Жаңа және түпнұсқа
RN49A2,LF(CT TRANS NPN/PNP PREBIAS 0.2W US6
RN49A2 Жаңа және түпнұсқа
Top