RN4906FE

RN4906FE(TE85L,F) vs RN4906FE,LF(CT

 
PartNumberRN4906FE(TE85L,F)RN4906FE,LF(CT
DescriptionBipolar Transistors - Pre-Biased Gen Trans PNP x 2 ES6, -50V, -100ABipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
ManufacturerToshibaToshiba
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased
RoHSYY
ConfigurationDual-
Transistor PolarityNPN, PNPNPN, PNP
Typical Input Resistor4.7 kOhms4.7 kOhms
Typical Resistor Ratio0.10.1
Mounting StyleSMD/SMTSMD/SMT
Package / CaseES6-6SOT-563
DC Collector/Base Gain hfe Min8080
Maximum Operating Frequency250 MHz-
Collector Emitter Voltage VCEO Max50 V50 V
Continuous Collector Current100 mA100 mA
Peak DC Collector Current100 mA-
Pd Power Dissipation100 mW100 mW
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
SeriesRN4906RN4906
PackagingReelReel
Collector Base Voltage VCBO50 V-
Emitter Base Voltage VEBO5 V5 V
Operating Temperature Range- 55 C to + 150 C-
BrandToshibaToshiba
Number of Channels2 Channel2 Channel
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity40004000
SubcategoryTransistorsTransistors
Unit Weight-0.000106 oz
Өндіруші Бөлім № Сипаттама RFQ
Toshiba
Toshiba
RN4906FE(TE85L,F) Bipolar Transistors - Pre-Biased Gen Trans PNP x 2 ES6, -50V, -100A
RN4906FE,LF(CT Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
RN4906FE,LF(CT Bipolar Transistors - Pre-Biased Bias Resistor Built-in transisto
RN4906FE(TE85L,F) Bipolar Transistors - Pre-Biased Gen Trans PNP x 2 ES6, -50V, -100A
RN4906FELF(CTCT-ND Жаңа және түпнұсқа
RN4906FELF(CTDKR-ND Жаңа және түпнұсқа
RN4906FELF(CTTR-ND Жаңа және түпнұсқа
RN4906FELF(CT Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRAN 200MW/1MHZ
RN4906FE Жаңа және түпнұсқа
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