 |  | | |
| PartNumber | RN1110MFV,L3F | RN1110MFV(TPL3) | RN1110MFV |
| Description | Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7Kohms | |
| Manufacturer | Toshiba | Toshiba | - |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | - |
| RoHS | Y | N | - |
| Configuration | Single | Single | - |
| Transistor Polarity | NPN | NPN | - |
| Typical Input Resistor | 4.7 kOhms | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-723-3 | - | - |
| DC Collector/Base Gain hfe Min | 120 | 700 | - |
| Collector Emitter Voltage VCEO Max | 50 V | 50 V | - |
| Continuous Collector Current | 100 mA | 100 mA | - |
| Pd Power Dissipation | 150 mW | 150 mW | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | RN1110MFV | RN1110MFV | - |
| Packaging | Reel | Reel | - |
| Emitter Base Voltage VEBO | 5 V | 5 V | - |
| Brand | Toshiba | Toshiba | - |
| Number of Channels | 1 Channel | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 8000 | 8000 | - |
| Subcategory | Transistors | Transistors | - |
| Collector Base Voltage VCBO | - | 50 V | - |
| DC Current Gain hFE Max | - | 120 @ 1mA @ 5V | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Toshiba |
RN1110MFV,L3F | Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor | |
| RN1110MFV(TPL3) | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7Kohms | ||
| RN1110MFV(TPL3) | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7Kohms | ||
| RN1110MFVL3FCT-ND | Жаңа және түпнұсқа | ||
| RN1110MFVL3FDKR-ND | Жаңа және түпнұсқа | ||
| RN1110MFVL3FTR-ND | Жаңа және түпнұсқа | ||
| RN1110MFV | Жаңа және түпнұсқа |