RN1109M

RN1109MFV(TPL3) vs RN1109MFVL3F-ND vs RN1109MFV

 
PartNumberRN1109MFV(TPL3)RN1109MFVL3F-NDRN1109MFV
DescriptionBipolar Transistors - Pre-Biased 100mA 50volts 3Pin 47K x 22Kohms
ManufacturerToshiba--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationSingle--
Transistor PolarityNPN--
Typical Input Resistor47 kOhms--
Typical Resistor Ratio2.14--
Mounting StyleSMD/SMT--
DC Collector/Base Gain hfe Min70--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Peak DC Collector Current100 mA--
Pd Power Dissipation150 mW--
Maximum Operating Temperature+ 150 C--
SeriesRN1109--
PackagingReel--
DC Current Gain hFE Max70--
BrandToshiba--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity8000--
SubcategoryTransistors--
Өндіруші Бөлім № Сипаттама RFQ
Toshiba
Toshiba
RN1109MFV(TPL3) Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 47K x 22Kohms
RN1109MFV(TPL3) Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 47K x 22Kohms
RN1109MFVL3F-ND Жаңа және түпнұсқа
RN1109MFV Жаңа және түпнұсқа
RN1109MFVTPL3 Жаңа және түпнұсқа
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