![]() | |||
| PartNumber | RN1106MFV,L3F | RN1106MFV(TPL3) | RN1106MFV(TL3,T) |
| Description | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 47Kohms | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO |
| Manufacturer | Toshiba | Toshiba | TOSHIBA |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Single, Pre-Biased |
| RoHS | Y | N | - |
| Configuration | Single | Single | - |
| Transistor Polarity | NPN | NPN | - |
| Typical Input Resistor | 4.7 kOhms | 4.7 kOhms | - |
| Typical Resistor Ratio | 0.1 | 0.1 | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-723-3 | - | - |
| DC Collector/Base Gain hfe Min | 80 | 80 | - |
| Maximum Operating Frequency | - | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | 50 V | - |
| Continuous Collector Current | 100 mA | 100 mA | - |
| Peak DC Collector Current | - | 100 mA | - |
| Pd Power Dissipation | 150 mW | 150 mW | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | RN1106MFV | RN1106MFV | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Brand | Toshiba | Toshiba | - |
| Channel Mode | Enhancement | - | - |
| Maximum DC Collector Current | 100 mA | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 8000 | 8000 | - |
| Subcategory | Transistors | Transistors | - |
| Packaging | - | Reel | - |
| DC Current Gain hFE Max | - | 80 | - |