RGTH80TS

RGTH80TS65DGC11 vs RGTH80TS65 vs RGTH80TS65D

 
PartNumberRGTH80TS65DGC11RGTH80TS65RGTH80TS65D
DescriptionIGBT Transistors 650V 40A IGBT Stop TrenchROHRGTH80TS65D (Alt: RGTH80TS65D)
ManufacturerROHM Semiconductor-Rohm Semiconductor
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole-Through Hole
Collector Emitter Voltage VCEO Max650 V--
Collector Emitter Saturation Voltage1.6 V-1.6 V
Maximum Gate Emitter Voltage30 V-+/- 30 V
Continuous Collector Current at 25 C70 A-70 A
Pd Power Dissipation234 W--
Minimum Operating Temperature- 40 C-- 40 C
Maximum Operating Temperature+ 175 C-+ 175 C
SeriesRGTH80TS65D-RGTH80TS65D
PackagingTube-Tube
Continuous Collector Current Ic Max70 A-70 A
Operating Temperature Range- 40 C to + 175 C--
BrandROHM Semiconductor--
Continuous Collector Current40 A--
Gate Emitter Leakage Current+/- 200 nA-+/- 200 nA
Product TypeIGBT Transistors--
Factory Pack Quantity450--
SubcategoryIGBTs--
Part # AliasesRGTH80TS65D--
Unit Weight1.340411 oz-1.340411 oz
Package Case--TO-247-3
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--TO-247N
Power Max--234W
Reverse Recovery Time trr--58ns
Current Collector Ic Max--70A
Voltage Collector Emitter Breakdown Max--650V
IGBT Type--Trench Field Stop
Current Collector Pulsed Icm--160A
Vce on Max Vge Ic--2.1V @ 15V, 40A
Switching Energy---
Gate Charge--79nC
Td on off 25°C--34ns/120ns
Test Condition--400V, 40A, 10 Ohm, 15V
Pd Power Dissipation--234 W
Collector Emitter Voltage VCEO Max--650 V
Өндіруші Бөлім № Сипаттама RFQ
RGTH80TS65GC11 IGBT Transistors 650V 40A Trench IGBT Field Stop TO-247N
RGTH80TS65DGC11 IGBT Transistors 650V 40A IGBT Stop Trench
RGTH80TS65DGC11 IGBT Transistors 650V 40A Field Stop Trench IGBT
RGTH80TS65GC11 650V 40A FIELD STOP TRENCH IGBT
RGTH80TS65 Жаңа және түпнұсқа
RGTH80TS65D ROHRGTH80TS65D (Alt: RGTH80TS65D)
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