RGT50T

RGT50TM65DGC9 vs RGT50TS65D vs RGT50TS65DG

 
PartNumberRGT50TM65DGC9RGT50TS65DRGT50TS65DG
DescriptionIGBT Transistors FIELD STOP TRENCH IGBT
ManufacturerROHM Semiconductor--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-263-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max650 V--
Collector Emitter Saturation Voltage1.65 V--
Maximum Gate Emitter Voltage30 V--
Continuous Collector Current at 25 C30 A--
Pd Power Dissipation133 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
PackagingTube--
BrandROHM Semiconductor--
Gate Emitter Leakage Current200 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity50--
SubcategoryIGBTs--
Part # AliasesRGT50TM65D--
Өндіруші Бөлім № Сипаттама RFQ
RGT50TM65DGC9 IGBT Transistors FIELD STOP TRENCH IGBT
RGT50TS65DGC11 IGBT Transistors 650V 25A IGBT Stop Trench
RGT50TS65DGC11 IGBT Transistors 650V 25A Field Stop Trench IGBT
RGT50TS65D Жаңа және түпнұсқа
RGT50TS65DG Жаңа және түпнұсқа
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