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| PartNumber | RGT00TS65DGC11 | RGT00TS65D | RGT00TS65DG |
| Description | IGBT Transistors 650V 50A Trench IGBT Field Stop TO-247N | ||
| Manufacturer | ROHM Semiconductor | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247N-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 650 V | - | - |
| Collector Emitter Saturation Voltage | 1.65 V | - | - |
| Maximum Gate Emitter Voltage | 30 V | - | - |
| Continuous Collector Current at 25 C | 85 A | - | - |
| Pd Power Dissipation | 277 W | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Packaging | Tube | - | - |
| Brand | ROHM Semiconductor | - | - |
| Gate Emitter Leakage Current | 200 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 450 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | RGT00TS65D | - | - |
| Unit Weight | 0.211644 oz | - | - |