 | |  | |
| PartNumber | QPD0060SR | QPD0060TR7 | QPD0060 |
| Description | RF Amplifier 100W GaN25HV | RF Amplifier 100W GaN25HV | RF JFET Transistors DC-3.6GHz GaN 90W 48V |
| Manufacturer | Qorvo | Qorvo | Qorvo |
| Product Category | RF Amplifier | RF Amplifier | RF JFET Transistors |
| RoHS | Y | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | DFN-6 | DFN-6 | DFN-6 |
| Type | Power Amplifier | Power Amplifier | - |
| Technology | GaN | GaN | GaN |
| Operating Frequency | DC to 2.7 GHz | DC to 2.7 GHz | 1.8 GHz to 3.8 GHz |
| Gain | 25 dB | 25 dB | 16.2 dB |
| Operating Supply Voltage | 48 V | 48 V | - |
| Packaging | Reel | Reel | Reel |
| Brand | Qorvo | Qorvo | Qorvo |
| Moisture Sensitive | Yes | Yes | - |
| Product Type | RF Amplifier | RF Amplifier | RF JFET Transistors |
| Factory Pack Quantity | 100 | 500 | 250 |
| Subcategory | Wireless & RF Integrated Circuits | Wireless & RF Integrated Circuits | Transistors |
| Vds Drain Source Breakdown Voltage | - | - | - |
| Vgs Gate Source Breakdown Voltage | - | - | - |
| Id Continuous Drain Current | - | - | - |
| Output Power | - | - | 90 W |
| Maximum Drain Gate Voltage | - | - | - |
| Minimum Operating Temperature | - | - | - 40 C |
| Maximum Operating Temperature | - | - | - |
| Pd Power Dissipation | - | - | - |
| Application | - | - | Microcell Base Station, W-CDMA / LTE |
| Configuration | - | - | Single |
| Series | - | - | QPD |
| Forward Transconductance Min | - | - | - |
| Development Kit | - | - | QPD0060PCB4B01 |
| Part # Aliases | - | - | 1131037 |
