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| PartNumber | PSMN3R7-100BSEJ | PSMN3R7-30YLC,115 | PSMN3R7-25YLC,115 |
| Description | MOSFET PSMN3R7-100BSE - N-channel 100 V, 3.95 mO, standard level MOSFET in D2PAK | MOSFET N-CH 30V 100A LFPAK | IGBT Transistors MOSFET N-Ch 25V 3.9 mOhms |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 3.95 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 246 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 405 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Nexperia | - | - |
| Fall Time | 69 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 64 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 98 ns | - | - |
| Typical Turn On Delay Time | 40 ns | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Nexperia |
PSMN3R7-100BSEJ | MOSFET PSMN3R7-100BSE - N-channel 100 V, 3.95 mO, standard level MOSFET in D2PAK | |
| PSMN3R7-100BSEJ | PSMN3R7-100BSE/SOT404/D2PAK | ||
NXP Semiconductors |
PSMN3R7-30YLC,115 | MOSFET N-CH 30V 100A LFPAK | |
| PSMN3R7-25YLC,115 | IGBT Transistors MOSFET N-Ch 25V 3.9 mOhms | ||
| PSMN3R7-25YLC115 | Now Nexperia PSMN3R7-25YLC - Power Field-Effect Transistor, 97A I(D), 25V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK | ||
| PSMN3R7-30YLC115 | Now Nexperia PSMN3R7-30YLC - Power Field-Effect Transistor, 100A I(D), 30V, 0.00515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK |